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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N03EDE, NP80N03KDE
NP80N03CDE, NP80N03DDE, NP80N03MDE, NP80N03NDE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
<R>
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
NP80N03EDE-E1-AY
NP80N03EDE-E2-AY
NP80N03KDE-E1-AY
NP80N03KDE-E2-AY
Note1, 2
Note1, 2
Note1
Note1
Pure Sn (Tin)
Tape 800 p/reel
TO-263 (MP-25ZJ) typ. 1.4 g
TO-263 (MP-25ZK) typ. 1.5 g
NP80N03CDE-S12-AZ
Note1, 2
Sn-Ag-Cu
TO-220 (MP-25) typ. 1.9 g
NP80N03DDE-S12-AY
NP80N03MDE-S18-AY
NP80N03NDE-S18-AY
Note1, 2
Note1
Note1
Pure Sn (Tin)
Tube 50 p/tube
TO-262 (MP-25 Fin Cut) typ. 1.8 g
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
Notes 1. Pb-free (This product does not contain Pb in the external electrode.)
2. Not for new design
FEATURES
? Channel Temperature 175 degree rated
? Super Low on-state Resistance
R DS(on)1 = 7.0 m Ω MAX. (V GS = 10 V, I D = 40 A)
R DS(on)2 = 9.0 m Ω MAX. (V GS = 5 V, I D = 40 A)
(TO-220)
(TO-262)
R DS(on)3 = 11 m Ω MAX. (V GS = 4.5 V, I D = 40 A)
? Low input capacitance
C iss = 2600 pF TYP.
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15310EJ3V0DS00 (3rd edition)
Date Published October 2007 NS
Printed in Japan
The mark <R> shows major revised points.
2001, 2007
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:"
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相关代理商/技术参数
NP80N03KDE-E2-AY 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP80N03KLE 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP80N03KLE-E1-AY 功能描述:MOSFET N-CH 30V 80A TO-263 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NP80N03KLE-E2-AY 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP80N03MDE 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP80N03MDE-S18-AY 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP80N03MLE 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP80N03MLE-S18-AY 功能描述:MOSFET N-CH 30V 80A TO-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件